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Study of the Local Environment of Mn Ions Implanted in GaSb

100%

Wolska A., Lawniczak-Jablonska K., Klepka M., Barcz A., Hallen A., Arvanitis D.

issue 2

286-292

The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation.

XANES Studies of Mn K and L_{3,2} Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing

84%

Wolska A., Lawniczak-Jablonska K., Klepka M., Jakieła R., Demchenko I., Sadowski J., Holub-Krappe E., Persson A., Arvanitis D.

Acta Physica Polonica A

2008

vol. 114

issue 2

357-366

Ga_{1-x}Mn_xAs is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Ga_{1-x}Mn_xAs samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.

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2 Acta Physica Polonica A

1 2010

1 2008

2 Arvanitis D.

2 Klepka M.

2 Lawniczak-Jablonska K.

2 Wolska A.

1 Barcz A.

1 Demchenko I.

1 Hallen A.

1 Holub-Krappe E.

1 Jakieła R.

1 Persson A.

1 Sadowski J.

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Study of the Local Environment of Mn Ions Implanted in GaSb

XANES Studies of Mn K and L_{3,2} Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing