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A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

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Al-Ghamdi A., Al-Hartomy O., Gupta R., El-Tantawy F., Taskan E., Hasar H., Yakuphanoglu F.

Acta Physica Polonica A

2012

vol. 121

issue 3

673-677

We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO_2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO_2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO_2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO_2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO_2/Si junction. The interface states of the Al/p-Si/SiO_2/DNA/Ag and Al/p-Si/SiO_2/Ag junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.

Determination of Optical Constants of Nanocluster CdO Thin Films Deposited by Sol-Gel Technique

84%

Serbetci Z., Gunduz B., Al-Ghamdi A., Al-Hazmic F., Arık K., El-Tantawy F., Yakuphanoglu F., Farooq W.

Acta Physica Polonica A

2014

vol. 126

issue 3

798-808

The optical properties of the CdO and Pt doped CdO thin films synthesized by sol-gel technique were investigated. The lowest grain size value (81.34 nm) was found to be for CdO thin film. The Pt doped CdO films are transformed to clusters with nanoparticles. The transparency properties of the CdO thin film is changed with Pt doping. The plots of refractive index indicate abnormal and normal dispersion regions. The refractive index values of the CdO thin film are changed with Pt doping. The direct optical band gap values of the films were changed with doping of Pt. The film of 0.5% Pt doped CdO indicates the lowest optical band gap value (2.421 eV). The imaginary parts of the optical conductivity of the CdO and Pt doped CdO thin films are higher than that of the real parts of the optical conductivity.

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2 Acta Physica Polonica A

1 2014

1 2012

2 Al-Ghamdi A.

2 El-Tantawy F.

2 Yakuphanoglu F.

1 Al-Hartomy O.

1 Al-Hazmic F.

1 Arık K.

1 Farooq W.

1 Gunduz B.

1 Gupta R.

1 Hasar H.

1 Serbetci Z.

1 Taskan E.

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A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

Determination of Optical Constants of Nanocluster CdO Thin Films Deposited by Sol-Gel Technique