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EN
The low temperature behavior of the KTaO_3 type incipient ferroelectric crystals is of constant interest. The quantum fluctuations reduce the transition to the ferroelectric state in these crystals. It is possible that the small amount of the dopant Li^+ can lead, through the elastic interactions, to local glass-like short-range order or even to the relaxor ferroelectric order for x>2.6%. We presented that the low lithium doped x=0.005 KTaO_3 crystals exhibit the dielectric dispersion ofε andε", suggesting the glass-like behavior in the low temperature range.
EN
Host-guest interactions can be the unique method of spin manipulation in nanoscale. Strong changes in spin localization are generated when potential barriers between nanographitic units of activated carbon fibers are modified by interaction with adsorbed molecules. Stronger modifications occur when dipolar guest molecules are stimulated with external electric field. We report experimental results which show the influence of electric field on the spin localization in activated carbon fibers.
EN
The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).
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The Evolution of Superconducting Phase MgB_x

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EN
Thin layers of MgB_x were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous MgB_2 film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that T_c becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.
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