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Electrical Resistivity of the Monoatomic Metallic Layer

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EN
We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.
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vol. 125
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issue 5
1220-1223
EN
In this article we investigate the electron-phonon interaction in metals in the system strongly reduced in one dimension. The Fermi sphere which represents the free-electron structure of a bulk metal was replaced by a discrete set of the Fermi disks. Using the variational expression for resistivity the temperature and film thickness dependences of the resistivity were derived and compared with experimental data.
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