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Charge Carrier Dynamics in Ga_{1-x}Mn_{x}As Studied by Resistance Noise Spectroscopy

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Lonsky M., Teschabai-Oglu J., Pierz K., Sievers S., Schumacher H., Yuan Y., Böttger R., Zhou S., Müller J.

Acta Physica Polonica A

2018

vol. 133

issue 3

520-522

We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.

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1 Acta Physica Polonica A

1 2018

1 Böttger R.

1 Lonsky M.

1 Müller J.

1 Pierz K.

1 Schumacher H.

1 Sievers S.

1 Teschabai-Oglu J.

1 Yuan Y.

1 Zhou S.

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Charge Carrier Dynamics in Ga_{1-x}Mn_{x}As Studied by Resistance Noise Spectroscopy