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LSMO Films with Increased Temperature of MI Transition

100%
Španková M., Chromik Š., Dobročka E., Štrbík V., Sojková M.
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vol. 126
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issue 1
212-213
EN
Epitaxial La_{0.67}Sr_{0.33}MnO_{3} thin films with a significant increased temperature of metal-insulator transition (~450 K) are prepared on single crystal MgO (001) substrates using different deposition techniques - a dc magnetron sputtering or a pulsed laser deposition. The crystalline perfection of the films is characterized by X-ray diffraction technique (rocking curve measurements and reciprocal space maps). As a consequence of different methods of the film preparation we show various types of the LSMO crystal structure. Our results indicate that all the LSMO layers grown on the MgO substrate with a lattice misfit of about 8% are relaxed.
2
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LSMO/YBCO Heterostructures and Investigation of "Negative" Resistance Effect in the Interface

86%
Sojková M., Nurgaliev T., Štrbík V., Chromik Š., Blagoev B., Španková M.
Acta Physica Polonica A
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2017
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vol. 131
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issue 4
842-844
EN
Samples containing the ferromagnetic manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) and high temperature superconducting YBa₂Cu₃O₇ (YBCO) single thin film areas and YBCO/LSMO bilayer area were prepared on LaAlO₃ (LAO) substrates and were used for investigation of the electrical properties of the interface. The measurements in the YBCO/LSMO interface demonstrated "negative" values of the resistance. A good interpretation of the obtained results was performed in the framework of a 1D model, which took into account the resistance of the interface R_{if} and the temperature dependence of the resistance of YBCO and LSMO films. It was shown that the effect of "negative" resistance arises because of the redistribution of the measuring electrical current in the interphase area if the resistance of the interface R_{if} is small in comparison with the resistances of the neighboring electrodes.
3
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Magnetization, Susceptibility and Critical Currents of (Tl_{2-x}Re_{x})Ba_{2}CaCu_{2}O_{y} Thin Films

86%
Woch W., Dujavová A., Przewoźnik J., Zalecki R., Kołodziejczyk A., Sojková M., Chromik Š.
Acta Physica Polonica A
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2012
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vol. 121
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issue 4
845-849
EN
The magnetization and the AC susceptibility vs. the temperature as well as the applied magnetic field of the thin film (Tl_{2-x}Re_{x})Ba_{2}CaCu_{2}O_{y} with x=0 and 0.15 on R-plane sapphire substrate with CeO_{2} buffer layer were measured and analyzed. XRD measurements show c-axis as well as a-b plane oriented Tl-1212 and superconducting pure phase. The zero critical temperature of the Tl-Re sample is 99.9 K and is practically the same as the critical temperature of the rhenium free sample: 99.5 K. The Tl-Re superconductor exhibits two peaks of the absorption part of AC susceptibility in the vicinity of the critical temperature in contrary to the rhenium free sample. The first peak placed in higher temperature is related to intragranular properties while the second peak is connected with the intergranular one. The critical current densities versus temperature were calculated from AC susceptibility as well as from the magnetization loops measurements using the Bean's critical state model. The Tl-Re film exhibits the higher critical current in comparison to the rhenium free thallium based film.
4
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Characterization of Epitaxial LSMO Films Grown on STO Substrates

73%
Španková M., Štrbík V., Chromik Š., Zheng D., Li J., Machajdík D., Kobzev A., Plecenik T., Sojková M.
Acta Physica Polonica A
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2017
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vol. 131
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issue 4
848-850
EN
Epitaxial manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) layers, with a thickness of 20-50 nm, are prepared on single crystal (001) SrTiO₃ (STO) substrates by pulsed laser deposition technique. Structural characterization (composition analysis, surface morphology), investigated by the Rutherford backscattering spectroscopy and atomic force microscopy, reveals the growth of stoichiometric LSMO films with a smooth surface (root-mean-square value of 0.21-1.6 nm). The prepared LSMO films possess high Curie temperature ( ≈ 412 K), low room temperature resistivity (1-2 mΩ cm) and maximum of temperature coefficient of resistivity TCR = 2.7% K¯¹ at 321 K.
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