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Linear Polarized Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Uniaxially Deformed Germanium

100%
Andrianov A., Zakhar'in A., Yassievich I., Zinov'ev N.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
863-867
EN
We report on polarization spectra of spontaneous terahertz electroluminescence from uniaxially deformed Ge(Ga). At compressive pressure of about 3±0.3 kbar in the [111] direction, near the impurity breakdown threshold, the linear polarization degree attains ≈80-90% for the main lines of the terahertz emission.
2
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Spontaneous Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Ge

100%
Andrianov A., Zaharin A., Yassievich I., Zinovev N.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
142-146
EN
The spectra of spontaneous terahertz (THz) electroluminescence at the breakdown of shallow Ga acceptor in Ge were observed for the first time and investigated. We found and characterized the emission lines corresponding to the hole transitions between the excited states and the ground state of the impurity center as well as the transitions of the hot holes from the valence band to the impurity and within the valence band. A high quantum yield of the radiative transitions will become an important factor in designing electrically pumped THz emitters for the≈2 THz spectral range.
3
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Generation of Terahertz Radiation by a Photoconductive Antenna

100%
Trukhin V., Andrianov A., Zinov'ev N.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
921-924
EN
We report on the first principle calculations of photocarriers kinetics in a photoconductive antenna excited by an ultrashort optical laser pulse. The solution of non-equilibrium Boltzmann equation is used to derive the expression for the irradiated electric field. The analysis reveals the important role of non-uniform photocarrier distribution inside the active layer in the formation of the terahertz radiation from the emitter in both collinear and anti-collinear directions.
4
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Mode-Locked Dual-Wavelength Heterolasers for Terahertz Generation via Intracavity Wave Mixing

76%
Belyanin A., Kocharovsky V., Kocharovsky V., Kukushkin V., Andrianov A., Aleshkin V., Dubinov A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
869-873
EN
It is shown that the mid/far-infrared (IR) and THz pulse generation via intracavity difference-frequency mixing in quantum-well dual-wavelength heterolasers can be rather efficient under mode-locking regime for one or both lasing fields even at room temperature. In a simple model we derive an explicit formula for intensity of the generated IR or THz pulse and find that this method is capable of producing picosecond pulses at ≈1 GHz repetition rate with the peak power of the order of 1 W and ≤ 0.2 mW at 10 μm and 50 μm wavelengths, respectively.
5
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Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers

52%
Vorobjev L., Firsov D., Shalygin V., Panevin V., Sofronov A., Ustinov V., Zhukov A., Egorov A., Andrianov A., Zakhar'in A., Ganichev S., Danilov S., Kozlov D.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
925-928
EN
We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
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