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Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence

100%
Kudrawiec R., Latkowska M., Sęk G., Misiewicz J., Ibáñez J., Henini M., Hopkinson M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
930-932
EN
GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
2
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Photoluminescence in Tilted Magnetic Field of Triply Negatively Charged Excitons Hybridized with a Continuum

84%
Van Hattem B., Corfdir P., Brereton P., Pearce P., Graham A., Stanley M., Hugues M., Hopkinson M., Phillips R.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
798-800
EN
We analyse the magneto-photoluminescence of triply negatively charged excitons coupled to a continuum of states. The excitonic complex is confined to a Stranski-Krastanow InAs/GaAs quantum dot embedded in a Schottky diode. Different orientations of the magnetic field have been investigated. A modelling of the Coulomb blockade together with the calculation of the electron Fock-Darwin spectrum has allowed us to predict the magnetic fields of anticrossing between the quantum dot energy states and the wetting layer Landau levels. Good agreement between the theoretical model and the experimental results has been obtained.
3
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Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy

68%
Mowbray D. J., Fry P. W., Skolnick M. S., Itskevich I. E., Harris L., Ashmore A. D., Finley J. J., Wilson L. R., Schumacher K. L., Barker J. A., O'Reilly E. P., Al-Khafaji M., Cullis A. G., Hopkinson M., Clark J. C., Hill G.
Acta Physica Polonica A
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2000
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vol. 98
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issue 3
279-293
EN
The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots, in-plane wave function anisotropies and the modal gain of a quantum dot laser are determined.
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