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Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field

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Hernandez C., Terki F., Charar S., Sadowski J., Maude D., Stanciu V., Svedlindh P.

Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T_c≈40 K), a new phase transition is observed close to 13 K.

Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices

100%

Wesela W., Wosiński T., Mąkosa A., Figielski T., Sadowski J., Terki F., Charar S.

Acta Physica Polonica A

2007

vol. 112

issue 2

369-373

The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.

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2 Acta Physica Polonica A

1 2007

1 2003

2 Charar S.

2 Sadowski J.

2 Terki F.

1 Figielski T.

1 Hernandez C.

1 Maude D.

1 Mąkosa A.

1 Stanciu V.

1 Svedlindh P.

1 Wesela W.

1 Wosiński T.

Search results

Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field

Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices