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Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission

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Godlewski M., Ivanov V., Goldys E., Phillips M., Böttcher T., Figge S., Hommel D., Czernecki R., Prystawko P., Leszczynski M., Perlin P., Grzegory I., Porowski S.

Acta Physica Polonica A

2003

vol. 103

issue 6

689-694

Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.

Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

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Böttcher T., Einfeldt S., Figge S., Kirchner V., Hommel D., Selke H., Ryder P., Bertram F., Riemann T., Christen J., Lunz U., Becker C.

Acta Physica Polonica A

1998

vol. 94

issue 2

260-264

The luminescence of In_{x}Ga_{1-x}N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.

Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films

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Godlewski M., Goldys E., Phillips M., Böttcher T., Figge S., Hommel D., Czernecki R., Prystawko P., Leszczynski M., Perlin P., Wisniewski P., Suski T., Bockowski M., Grzegory I., Porowski S.

issue 4-5

627-632

Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.

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3 Acta Physica Polonica A

1 2003

1 2002

1 1998

3 Böttcher T.

3 Figge S.

3 Hommel D.

2 Czernecki R.

2 Godlewski M.

2 Goldys E.

2 Grzegory I.

2 Leszczynski M.

2 Perlin P.

2 Phillips M.

2 Porowski S.

2 Prystawko P.

1 Becker C.

1 Bertram F.

1 Bockowski M.

1 Christen J.

1 Einfeldt S.

1 Ivanov V.

1 Kirchner V.

1 Lunz U.

1 Riemann T.

1 Ryder P.

1 Selke H.

1 Suski T.

1 Wisniewski P.

Search results

Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission

Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films