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1
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Nonlinear Diffusion in Excited HgCdTe and Si Crystals

100%
Janavičius A., Norgėla Ž., Purlys R.
Acta Physica Polonica A
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2003
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vol. 104
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issue 5
459-467
EN
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
2
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Supercrystallization of NaCl from Solution Irradiated by Soft X-Rays

100%
Janavičius A., Purlys R., Rinkūnas R.
Acta Physica Polonica A
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2013
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vol. 123
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issue 4
777-781
EN
It was found that irradiation of a water solution of NaCl with the diffractometer DRON3-M (Russian device) had a large influence on two-step processes of crystallization. The irradiation in the first stage of crystallization of the solution produces metastable radicals of water and excited seeds, which stimulate a very fast crystallization after switching off irradiation. After the crystals reach a sufficient size, the crystal growth can be explained by creation of vacancy-interstitial pairs in the growing crystal due to irradiation. The increase of linear dimensions of the growing irradiated crystals is proportional to the square root √t of crystallization time because most important place in crystallization takes the ions diffusion by irradiated vacancies.
3
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Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

100%
Janavičius A., Purlys R., Norgėla Ž.
Acta Physica Polonica A
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2006
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vol. 109
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issue 2
159-170
EN
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
4
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Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

76%
Janavičius A., Balakauskas S., Kazlauskienė V., Mekys A., Purlys R., Storasta J.
Acta Physica Polonica A
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2008
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vol. 114
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issue 4
779-790
EN
We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10^{13} cm^{-3}) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.
5
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Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

76%
Janavičius A., Purlys R., Bulkšas A., Balakauskas S., Mekys A., Šablinskas V.
Acta Physica Polonica A
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2009
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vol. 116
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issue 6
1076-1080
EN
In this paper we applied the soft-X-ray radiation for generation of point defects, vacancies, and chemical reactions in quartz (SiO_{2}), taking into account our earlier made similar experiments with crystal silicon and importance of quartz for applications in many fields. In this case only radiative Auger's effects with electrons and electric dipole of atoms transitions can generate metastable vacancies, point defects, and induce chemical reactions. Usually, for point defects generation doses of gamma rays are used. We measured values of the Bragg reflections of X-rays and calculated mean square deviations of atoms in crystal lattice for defining the dynamics of irradiated point defects. We accomplished infrared measurements for establishing of generated chemical reactions, and conductivity measurements were also done.
6
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Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays

76%
Janavičius A., Storasta J., Purlys R., Mekys A., Balakauskas S., Norgėla Ž.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
55-68
EN
We applied soft X-rays for investigation of dynamics of the Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states produced in the lattice after ejection of the Auger electrons. The irradiated irregularities and defects of the lattice cause a change of the Bragg reflection maxima. Several resonance phenomena are related to metastable states introduced into Si crystal by soft X-rays irradiation. The resonance of mean square displacements of Si atoms in the lattice and the resonance of the Hall mobility after irradiation are obtained and considered.
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