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Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_{x}Ga_{1-x}As

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Surma M., Żytkiewicz Z., Fronc K., Stalinga P., Godlewski M.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
757-760
EN
Results of detailed electron spin resonance (ESR) study of Te doped Al_{x}Ga_{1-x}As epilayers with x = 0.41, 0.42, and 0.5 Al fractions are presented. It is shown that the ESR signal observed critically depends on cooling steps and that the shallow donor ESR signal can be observed prior to illumination. The first ESR study of AlGaAs layers with removed GaAs substrate are presented. The mechanism of the enhanced photosensitivity of the ESR signal is explained. It is found very paradoxical that the ESR signals decreases upon the illumination even though shallow donor concentration is increased.
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