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Search for new half-metallic ferromagnetic binary compounds composed of alkaline earth and III (boron) or IV (carbon) elements is reported. Ab initio all-electron density functional theory calculations in the generalised gradient approximation indicate possibility of half-metallic ferromagnetism. This is a new class of theoretically predicted hypothetical materials, without transition metal elements, not as yet discovered experimentally. Ferromagnetism is expected to be induced by suitable crystalline structure with lattice constant above some critical value. The predominant p electrons mechanism seems to be responsible for the formation and interactions of localised magnetic moments on boron or carbon atoms.
EN
We present studies of spin-dependent phenomena in the non-linear energy transport through a multilevel quantum dot/molecule in the Coulomb blockade regime. Calculations are performed within the framework of non-equilibrium Green function formalism based on the equation of motion. Thermal current flowing through the system due to temperature gradient significantly varies with gate voltage. It depends on relative orientation of magnetic moments in the electrodes, so in analogy to tunneling magnetoresistance the magnetothermal conductance is introduced, which describes the effect.
EN
Thermoelectric properties of nanoscopic system composed of a single-level quantum dot attached to ferromagnetic electrodes are studied with the use of the non-equilibrium Green function formalism. Electrical and heat currents flowing through the system under temperature gradient and bias voltage are calculated in the non-linear regime. Both charge and heat currents strongly depend on configuration of magnetic moments in the leads. TMR ratio is mostly positive, but in a region of small bias voltages, where the electron flow is determined by the temperature gradient, electrical current in parallel and antiparallel configurations flows in opposite directions leading to considerable negative TMR.
EN
We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.
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