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Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation

100%

Łusakowski J., Knap W., Kamińska E., Piotrowska A., Gavrilenko V.

Acta Physica Polonica A

2003

vol. 103

issue 6

545-551

Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

86%

Aleshkin V., Erofeeva Y., Gavrilenko V., Ikonnikov A., Kozlov D., Kuznetsov O., Veksler D.

Acta Physica Polonica A

2005

vol. 107

issue 1

137-141

New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A^+-centers and from 1s → 2p_+-type transitions from the ground state of the barrier-situated A^0-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E_B≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).

Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides

59%

Aleshkin V., Afonenko A., Biryukov A., Gavrilenko V., Dubinov A., Kocharovsky V., Morozov S., Maremynin K., Nekorkin S., Zvonkov B., Zvonkov N.

Acta Physica Polonica A

2005

vol. 107

issue 1

7-13

A possibility of parametric generation of middle and far infrared radiation due to the lattice nonlinearity in semiconductor laser diode and waveguide is discussed. Three possible waveguide constructions for effective generation are considered. The parametric generation method is shown to provide generation power of the order of milliwatt for middle infrared radiation and of tens of microwatt for far infrared radiation using modern quantum well laser diodes.

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3 Acta Physica Polonica A

2 2005

1 2003

3 Gavrilenko V.

2 Aleshkin V.

1 Afonenko A.

1 Biryukov A.

1 Dubinov A.

1 Erofeeva Y.

1 Ikonnikov A.

1 Kamińska E.

1 Knap W.

1 Kocharovsky V.

1 Kozlov D.

1 Kuznetsov O.

1 Maremynin K.

1 Morozov S.

1 Nekorkin S.

1 Piotrowska A.

1 Veksler D.

1 Zvonkov B.

1 Zvonkov N.

1 Łusakowski J.

Search results

Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides