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Electric Relaxation in Nb₆VSb₃O₂₅-Ceramics

100%

Groń T., Filipek E., Piz M., Kukuła Z., Pawlus S.

Acta Physica Polonica A

2016

vol. 129

issue 3

355-358

Broadband dielectric spectroscopy measurements of Nb₆VSb₃O₂₅ showed that in both the real (ε') and imaginary (ε'') components of permittivity there is visible relaxation process strongly obscured by dc conductivity. Application of the electric modulus representation of the data enables to study temperature evolution of this relaxation together with conductivity relaxation. It was showed that the activation energies for both processes are close. Low-frequency loss tangent increases strongly with temperature, suggesting that in the compound under study additional energy losses are associated with the conduction of electric current, as determined by the Joule-Lenz law.

Semiconducting Properties of Cu_5SbO_6

86%

Groń T., Filipek E., Dąbrowska G., Duda H., Mazur S., Kukuła Z., Pawlus S.

Acta Physica Polonica A

2012

vol. 122

issue 6

1105-1107

Thermoelectric power, electrical resistivity, I-V characteristics, relative electrical permittivity, dc magnetization and ac magnetic susceptibility measurements carried out on Cu_5SbO_6 showed p-type semiconducting behaviour with the activation energy of 0.24 eV as well as ferrimagnetic order with the Néel temperature of 5.2 K. The effective magnetic moment of 5.857 μ_{B}/f.u. revealed the orbital contribution to the magnetic moment. Large value of the relative electrical permittivity indicated that the Cu^{2+} ions with the unscreened and unfilled electron shells are responsible for the polarizability and forming of electric dipoles.

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2 Acta Physica Polonica A

1 2016

1 2012

2 Filipek E.

2 Groń T.

2 Kukuła Z.

2 Pawlus S.

1 Duda H.

1 Dąbrowska G.

1 Mazur S.

1 Piz M.

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Electric Relaxation in Nb₆VSb₃O₂₅-Ceramics

Semiconducting Properties of Cu_5SbO_6