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1
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Growth and Investigation of Oxide Heterostructures Based on Half-Metallic Fe3O4

100%
Vengalis B., Šliužienė K., Lisauskas V.
Acta Physica Polonica A
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2004
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vol. 105
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issue 6
659-665
EN
We report thin films of ferromagnetic Fe_3O_4 (magnetite) grown by a reactive magnetron sputtering at T=300÷450°C on lattice-matched MgO, and bilayer structures composed of Fe_3O_4 and underlying epitaxial films of highly conductive electron-doped In_2O_3〈Sn〉, LaNiO_3, and antiferromagnetic CoO. The prepared Fe3O4/MgO films and the bilayer structures demonstrated clearly defined resistance anomaly at Verwey transition point (T_V≈100-120 K). Formation of high resistance interlayer was indicated between the adjacent conducting Fe3O4 and LaNiO3 layers. However, relatively low interface resistivity of about 0.1 Ω cm^2 (at T=300 K) was estimated for the patterned Fe3O4/In2O3〈Sn〉 bilayer structures. Vertical electrical transport measurements revealed strong nonlinearity in the I-U dependences of the Fe3O4/In2O3 〈Sn〉 interface at T
2
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Magnetoresistive Properties of Manganite-Based Heterojunctions

76%
Devenson J., Vengalis B., Lisauskas V., Oginskis A., Anisimovas F., Ašmontas S.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1130-1132
EN
Hole-doped La_{2/3}Ba_{1/3}MnO_{3} (LBaMO), La_{2/3}Ca_{1/3}MnO_{3} (LCaMO) and La_{2/3}Ce_{1/3}MnO_{3} (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped SrTiO_{3}(100) (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
3
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Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties

76%
Lisauskas V., Butkutė R., Vengalis B., Šliužienė K., Tamulevicius S., Andrulevicius M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1055-1058
EN
We report preparation and investigation of p -n heterostructures based on Fe₃O₄ thin films grown on semiconductor Si and GaAs substrates. Fe₃O₄ films with thickness ranging from 60 to 300 nm were grown at 350÷450°C using dc magnetron sputtering technique. The measurement of X-ray diffraction and reflection high energy electron diffraction revealed polycrystalline microstructure of thin Fe₃O₄ films deposited on both Si and GaAs substrate. Investigation of surface composition by X-ray photoelectron spectroscopy showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II), and Fe(III). Transport measurements of Fe₃O₄/n-(Si, GaAs) heterostructures demonstrated nonlinear current-voltage (I -V) dependences in the temperature range from 300 K to 78 K.
4
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Fabrication and Study of the Organic-Inorganic Semiconductor Diodes Formed on n-Si

76%
Vengalis B., Šliužienė K., Lisauskas V., Grigaliūnaitė-Vonsevičienė G., Butkutė R., Lygaitis R., Gražulevičius J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
262-264
EN
We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.
5
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The Surface Hydro-Oxidation of LaNiO_{3-x} Thin Films

64%
Mickevičius S., Grebinskij S., Bondarenka V., Lisauskas V., Šliužienė K., Tvardauskas H., Vengalis B., Orłowski B., Osinniy V., Drube W.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
113-120
EN
The high-energy X-ray photoelectron spectroscopy was used to determine the composition and chemical structure of epitaxial LaNiO_{3-x} films obtained by a reactive dc magnetron sputtering. It was found that the oxide and hydroxide species of La and Ni are on the films surface. The thickness of hydroxide enriched layer, estimated from the oxide and hydroxide peak intensities, is about 2 nm.
6
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Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

64%
Vengalis B., Rosa A., Devenson J., Šliužienė K., Lisauskas V., Oginskis A., Anisimovas F., Pyragas V.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
290-293
EN
High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
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