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The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

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Du J., Ji Z., Wang C.

Open Physics

2007

vol. 5

issue 1

103-109

The electronic structures of doped Sb2O5 by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results showed that the substituted IV-family elements act as acceptors in Sb2O5. Partial DOSs indicates that by substituting Ge(GeSb) or Sn(SnSb), there may be a larger contribution to the total DOSs near EF than by substituting Si, which suggests that doping Ge or Sn in Sb2O5 produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely to exist in the substituted position rather than in the interstitial position in Sb2O5, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb2O5. Ionization energy results show that GeSb or SnSb, two among the three impurities considered, act as shallow acceptors in Sb2O5, thus producing a higher concentration of holes.

Structural, morphology and electrical properties of layered copper selenide thin film

100%

Ying Chyi Liew J., Talib Z., Mahmood W., Yunus M., Zainal Z., Halim S., Moksin M., Yusoff W., Pah Lim K.

Open Physics

2009

vol. 7

issue 2

379-384

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

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2 Open Physics

1 2009

1 2007

1 Du J.

1 Halim S.

1 Ji Z.

1 Mahmood W.

1 Moksin M.

1 Pah Lim K.

1 Talib Z.

1 Wang C.

1 Ying Chyi Liew J.

1 Yunus M.

1 Yusoff W.

1 Zainal Z.

Search results

The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

Structural, morphology and electrical properties of layered copper selenide thin film