Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 5

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Structural and electrical properties of KCa2Nb5O15 ceramics

100%
Behera B., Nayak P., Choudhary R.
Open Physics
|
2008
|
vol. 6
|
issue 2
289-295
EN
A polycrystalline sample of KCa2Nb5O15 with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (102–106 Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.
2
Content available remote

Structural, dielectric, electrical and piezoelectric properties of Ba4SrRTi3V7O30 (R=Sm, Dy) ceramics

100%
Sahoo P., Panigrahi A., Patri S., Choudhary R.
Open Physics
|
2008
|
vol. 6
|
issue 4
843-848
EN
Polycrystalline samples of Ba4SrRTi3V7O30 (R=Sm and Dy), members of the tungsten-bronze family, were prepared using a high-temperature, solid-state reaction technique and studied their electrical properties (using complex impedance spectroscopy) in a wide range of temperature (31–500°C) and frequency (1 kHz-1 MHz). Preliminary structural (XRD) analyses of these compounds show the formation of single-phase, orthorhombic structures at room temperature. The scanning electron micrographs (SEM) provided information on the quality of the samples and uniform distribution of grains over the entire surface of the samples. Detailed studies of the dielectric properties suggest that they have undergone ferroelectric-paraelectric phase transition well above the room temperatures (i.e., 432 and 355°C for R= Sm and Dy, respectively, at frequency 100 kHz). Measurements of electrical conductivity (ac and dc) as a function of temperature suggest that the compounds have semiconducting properties much above the room temperature, with negative temperature coefficient of resistance (NTCR) behavior. The existence of ferroelectricity in these compounds was confirmed from a polarization study.
3
Content available remote

Phase transition in Bi8Fe6Ti3O27 multiferroic ceramics

100%
Patri S., Choudhary R.
Open Physics
|
2008
|
vol. 6
|
issue 3
450-453
EN
The polycrystalline Bi8Fe6Ti3O27 compound was prepared by a high-temperature solid-state reaction technique. Preliminary structural analysis by X-ray diffraction (XRD) confirms the formation of a single-phase compound in an orthorhombic crystal system at room temperature. The elemental content of the compound was analyzed by EDAX microanalysis. Microstructural analysis by scanning electron microscopy (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the pellet sample. Detailed studies of temperature-dependent dielectric response at various frequencies show dielectric anomalies at 380, 389 and 403°C for 10 kHz, 100 kHz, and 1 MHz respectively. The hysteresis loop observed by applying an electric field of 12 kV/cm on the poled sample with smaller remanent polarization supports the existence of ferroelectricity in this material. The value of d33 of the compound was found to be 19 pC/N.
4
Content available remote

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

100%
Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
322-324
EN
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
5
Content available remote

Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

100%
Banaszak-Piechowska A., Paprocki K., Fabisiak K., Dudkowiak A., Szybowicz M., Staryga E.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 4
1411-1414
EN
The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ₃₀₀), current-voltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ₃₀₀ and I-V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ₃₀₀ ≈0.1-1 μS/cm. The I-V characteristics in these layers show space charge limited conduction behavior with I ~ V² in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.