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Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy

100%
Skowroński W., Wiśniowski P., Wrona J., Żywczak A., Stobiecki T.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
496-498
EN
We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.
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Structure and Magnetism of LSMO/BTO/MgO/LSMO Multilayers

86%
Pawlak J., Żywczak A., Szwachta G., Kanak J., Gajewska M., Przybylski M.
Acta Physica Polonica A
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2018
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vol. 133
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issue 3
548-551
EN
A multiferroic tunnel junction (MFTJ) is a promising device for future memory systems with discrete and different logic states which are controlled by a combination of electric and magnetic fields. The goal of ongoing research is to present ferroelectric and ferromagnetic properties, especially at room temperature (RT), represented as high values of tunnel electroresistance (TER) and tunnel magnetoresistance (TMR). A key aspect is the appropriate preparation of a sample allowing epitaxial growth. The thin layers were prepared by pulsed laser deposition on atomically smooth monocrystalline SrTiO₃ (STO) substrates. The ferromagnetic metal layers La_{0.67}Sr_{0.33}MnO₃ (LSMO) are separated by a layer of a ferroelectric insulator - BaTiO₃ (BTO). The same structure of LSMO, BTO and STO (perovskite) and a similar lattice constant make it possible to obtain high-quality heterostructures. Magnetic measurements confirm differences in the magnetic coercivity of the top and bottom LSMO layer, which allows to obtain their parallel and antiparallel magnetization orientation. A modification of the interfaces of BTO by thin MgO layer enables an increase in the value of the TER effect.
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