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1
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Impact of Strain on the Superconducting Properties of Strongly Underdoped La_{2-x}Sr_xCuO_4 Thin Films

100%
Zaytseva I., Cieplak M., Paszkowicz W., Abal'oshev A., Berkowski M.
Acta Physica Polonica A
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2012
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vol. 121
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issue 4
858-865
EN
Using pulsed laser deposition we have grown films of La_{2-x}Sr_xCuO_4 with x in close vicinity of the superconductor-insulator transition, x=0.051 and x=0.048, on SrLaAlO_4 substrates, and of different thickness d (from 25 nm to 250 nm). The X-ray diffraction shows that for each d the films grow with variable degree of compressive in-plane strain, with the largest strain achieved in thinnest films. The resistivity measurements show strong enhancement of superconductivity with increasing strain, so that the onset of superconductivity at temperature as high as 27 K is observed. With increasing strain the character of resistivity changes from the insulating to metallic.
2
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Ultrathin Niobium in the Si/Nb/Si Trilayers

86%
Zaytseva I., Abal'oshev O., Dłużewski P., Minikayev R., Cieplak M., Zhu L., Chien C.
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vol. 126
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issue 4a
A-140-A-144
EN
We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d, changes from 1.1 nm to 50 nm, while the thickness of Si is fixed at 10 nm. The niobium films are amorphous for d < 4 nm, while in thicker films the alligned polycrystalline grains are formed. We observe that the Hall coefficient changes sign into negative in the films with d < 1.6 nm. We also find that in the ultrathin films the magnetic field induces a transition from the superconducting into a metallic phase with the resistance smaller than the normal-state resistance.
3
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Strain Relaxation in Thin Films of La_{1.85}Sr_{0.15}CuO_4 Grown by Pulsed Laser Deposition

86%
Zaytseva I., Cieplak M., Abal'oshev A., Berkowski M., Domukhovski V., Paszkowicz W., Shalimov A.
Acta Physica Polonica A
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2007
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vol. 111
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issue 1
185-188
EN
X-ray diffraction, resistivity, and susceptibility measurements are used to examine the effects of film thickness d (from 17 to 250 nm) on the structural and superconducting properties of La_{1.85}Sr_{0.15}CuO_4 films grown by pulsed laser deposition on SrLaAlO_4 substrates. For each d the film sgrow with a variable strain, ranging from a large compressive strain in the thinnest films to a negligible or tensile strain in thick films. Our results indicate that the tensile strain is not caused by the off-stoichiometric layer at the substrate-film interface. Instead, it may be caused by the extreme oxygen deficiency in some of the films.
4
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Microstructure of the Pulsed Laser Deposited LaSrCuO Films

86%
Cieplak M., Abal'oshev A., Zaytseva I., Berkowski M., Guha S., Wu Q.
Acta Physica Polonica A
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2006
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vol. 109
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issue 4-5
573-576
EN
The X-ray diffraction and atomic force microscopy are used to examine the microstructure of La_{1.85}Sr_{0.15}CuO_4 films grown by pulsed laser deposition on LaSrAlO_4 substrates. The films grow with different degrees of built-in strain, ranging from a large compressive to a large tensile in-plain strain. The tensile strain cannot be attributed to a substrate-related strain. The possible origins of the tensile strain are discussed.
5
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Magnetoresistance of Si/Nb/Si Trilayers

73%
Zaytseva I., Cieplak M., Abal'oshev A., Dluzewski P., Grabecki G., Plesiewicz W., Zhu L., Chien C.
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issue 2
406-408
EN
We study the superconductor-insulator transition in Si/Nb/Si trilayers, in which the thickness of Si is fixed at 10 nm, and the nominal thickness of Nb changes in the range between d = 20 nm down to d = 0.3 nm. The transmission electron microscopy indicates the formation of the mixed Nb-Si layer for small d. Both the thickness-induced, and the magnetic-field induced superconductor-insulator transition is observed. The crossing point of the isotherms at the critical field B_{c} decreases with decreasing d, and it is T-independent at temperatures below 300 mK. At larger fields the weak peak in magnetoresistance appears in some of the films.
6
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Optimization of the Superconducting Properties of Laser Ablated YBa_2Cu_3O_{7-δ} Films on CeO_2-Buffered Sapphire

73%
Abal'osheva I., Zaytseva I., Aleszkiewicz M., Syryanyy Y., Gierłowski P., Abal'oshev O., Bezusyy V., Cieplak M.
Acta Physica Polonica A
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2012
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vol. 121
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issue 4
805-807
EN
We use pulsed laser deposition to grow YBa_2Cu_3O_{7-δ} (YBCO) superconducting films for microwave applications. The films are grown on R-cut sapphire substrates, with CeO_2 buffer layers, which are re-crystallized at high temperature prior to YBCO growth. Using the atomic force microscopy (AFM) and X-ray diffractometry we determine the optimal temperature for recrystallization (1000°C) and the optimal buffer layer thickness (30 nm). The properties of YBCO films of various thickness, grown on the optimized CeO_2 buffer layers, are studied using several methods, including AFM, magnetooptical imaging, and transport experiments. The YBCO film roughness is found to increase with the increasing film thickness, but the magnetic flux penetration in the superconducting state remains homogeneous. The superconducting parameters (the critical temperature and the critical current density) are somewhat lower than the similar parameters for YBCO films deposited on mono-crystalline substrates.
7
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Growth and Characterization of YBa_2Cu_3O_{7-δ} Films Deposited by Laser Ablation on CeO_2-Buffered Sapphire

73%
Abal'osheva I., Zaytseva I., Aleszkiewicz M., Malinowski A., Bezusyy V., Syryanyy Y., Gierłowski P., Abal'oshev O., Kończykowski M., Cieplak M.
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vol. 126
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issue 4a
A-69-A-73
EN
In this work we study the growth, by pulsed laser deposition, of YBa_2Cu_3O_{7-δ} (YBCO) films on the CeO_2-buffered R-cut sapphire substrates, with the buffer layer recrystallized prior to the deposition of superconductor. We find that the superconducting critical temperature and the critical current density of the films are very close to similar parameters for the YBCO films grown on lattice-matched single crystalline substrates. It appears that the structural defects in the buffer layer affect the microstructure of YBCO films, resulting in high values of the critical current density, suitable for applications.
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