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1

Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

100%

Knizikevičius R.

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issue 3

478-483

EN

The plasma chemical etching of Si and SiO_{2} in SF_{6}+O_{2} plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and SiO_{2} etching rates. It is found that the reaction probabilities of F atoms with Si atoms and SiO_{2} molecules are equal to ε = (8.75 ± 0.41) × 10^{-3} and ε = (7.18 ± 0.45) × 10^{-5}, respectively. The influence of O_{2} addition to SF_{6} plasma on the etching rate of Si is determined.

2

Desorption Activation Energy of SiBr_2 Molecules according to Steady-State Approximation

100%

Knizikevičius R.

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vol. 125

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issue 5

1240-1243

EN

The chemical etching of intrinsic and n-type polycrystalline silicon in Br_2 ambient is considered. The theoretically calculated dependences of silicon etching rates on pressure of Br_2 molecules at different temperatures are compared with experimentally measured ones. The reaction and desorption activation energies are evaluated. It is found that activation energy of Si + Br_2 → SiBr_2 reaction for intrinsic silicon is equal to (1.82 ± 0.24) eV, and decreases to (1.45 ± 0.24) eV when n-type silicon films are used. Desorption activation energy of SiBr_2 molecules for intrinsic silicon is equal to (1.94 ± 0.17) eV, and decreases to (1.51 ± 0.17) eV when n-type silicon films are used. Desorption of SiBr_2 molecules is an etching-rate limiting process at high pressure of Br_2 molecules.

3

Silicon Etching in XeF_2 Environment

100%

Knizikevičius R.

Acta Physica Polonica A

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2013

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vol. 124

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issue 1

137-140

EN

Enhancement of silicon etching rate in XeF_2 environment is considered by a proposed model, which includes processes of adsorption, activation, chemical reactions, relaxation, desorption, and sputtering. The enhancement of silicon etching rate is explained by considering hydrocarbon molecules from background gas contamination in the vacuum chamber, and assuming that hydrocarbon radicals enhance the etching rate. The composition of the adsorbed layer during silicon etching in XeF_2 environment is calculated. It is found that hydrocarbon radicals intensify reaction of XeF_2 molecules with Si atoms on the surface and that this changes the kinetics of the etching rate. Using the obtained theoretical results the difference in kinetics of the etching rates of first and subsequent run is explained.

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3 Acta Physica Polonica A

1 2014

1 2013

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3 Knizikevičius R.

Simulations of Si and SiO_{2} Etching in SF_{6}+O_{2} Plasma

Desorption Activation Energy of SiBr_2 Molecules according to Steady-State Approximation

Silicon Etching in XeF_2 Environment