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Electrochemically Deposited Cobalt Nanoarrays in SiO_2/n-Si Templates Produced by Swift Heavy Ion-Induced Modification Technology

100%

Koltunowicz T., Zhukowski P., Fedotova J., Bayev V., Streltsov E., Baran L.

Acta Physica Polonica A

2013

vol. 123

issue 5

929-931

Nanoarrays of Co nanorods were formed by means of electrochemical deposition in the nanoporous SiO_2/n-Si templates. Structure and magnetic properties at room temperatures were studied by means of atomic force and scanning electron microscopies, vibrating sample magnetometry. The presence of perpendicular magnetic anisotropy component at room temperature makes Co nanorods in the nanoporous SiO_2/n-Si templates promising for nanoelectronic devices and biomedical applications.

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

84%

Fedotova J., Ivanou D., Mazanik A., Svito I., Streltsov E., Saad A., Zukowski P., Fedotov A., Bury P., Apel P.

Acta Physica Polonica A

2015

vol. 128

issue 5

894-896

In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.

Magnetoresistance in n-Si/SiO_2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

68%

Fedotova J., Ivanou D., Ivanova Y., Fedotov A., Mazanik A., Svito I., Streltsov E., Saad A., Tyutyunnikov S., Kołtunowicz T., Demyanov S., Fedotova V.

Acta Physica Polonica A

2011

vol. 120

issue 1

133-135

A study of magnetotransport in the n-Si/SiO_2/Ni nanostructures with granular Ni nanorods in SiO_2 pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/SiO_2/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.

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3 Acta Physica Polonica A

1 2015

1 2013

1 2011

3 Fedotova J.

3 Streltsov E.

2 Fedotov A.

2 Ivanou D.

2 Mazanik A.

2 Saad A.

2 Svito I.

1 Apel P.

1 Baran L.

1 Bayev V.

1 Bury P.

1 Demyanov S.

1 Fedotova V.

1 Ivanova Y.

1 Koltunowicz T.

1 Kołtunowicz T.

1 Tyutyunnikov S.

1 Zhukowski P.

1 Zukowski P.

Search results

Electrochemically Deposited Cobalt Nanoarrays in SiO_2/n-Si Templates Produced by Swift Heavy Ion-Induced Modification Technology

Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

Magnetoresistance in n-Si/SiO_2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology