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Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

100%

Bala W., Drozdowski M., Kozielski M.

issue 5

723-730

Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.

Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

76%

Bala W., Głowacki G., Łukasiak Z., Drozdowski M., Kozielski M., Nossarzewska-Orłowska E., Brzozowski A.

Acta Physica Polonica A

1995

vol. 87

issue 2

445-448

Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.

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2 Acta Physica Polonica A

1 1995

1 1991

2 Bala W.

2 Drozdowski M.

2 Kozielski M.

1 Brzozowski A.

1 Głowacki G.

1 Nossarzewska-Orłowska E.

1 Łukasiak Z.

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Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon