Search results

Sort By:

Limit search:

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

100%

Kaci S., Keffous A., Bozetine I., Trari M., Fellahi O.

Acta Physica Polonica A

2016

vol. 130

issue 1

463-465

The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al structures with a-Si_{1-x}C_x:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si_{1-x}C_x:H film obtained at 150°C, a maximum value of λ was observed at 400 nm.

Refine search results

1 Acta Physica Polonica A

1 2016

1 Bozetine I.

1 Fellahi O.

1 Kaci S.

1 Keffous A.

1 Trari M.

Search results

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice