In this study amorphous hydrogenated carbon films (a-C:H) were formed on Si (111) from an Ar-C_2H_2 and Ar-C_2H_2-H_2 gas mixtures at 1000 Pa pressure using a plasma jet chemical vapour deposition. It is shown that by varying the Ar:C_2H_2 ratio and adding the hydrogen gas in plasma, the structure, surface morphology, growth rate of the coatings, and consequently their optical properties can be controlled.
A complex of meso-tetrakis (4-sulphonatophenyl) porphyrin covalently linked to titanium dioxide has been studied. Illumination of the complex with visible light was shown to result in formation of cationic radicals of the porphyrin. Shape and kinetics of the electron spin resonance signals were analysed which permitted calculation of spectroscopic parameters characterising the photoinduced process of the radicals formation. The dye-semiconductor complex was thoroughly characterised to indicate its possible applications.