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1
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Photo-EPR Investigations of Thermal Donors in Silicon

100%
Bagraev N., Bekman H., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
397-400
EN
Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. The spectral dependence of the intensity of the EPR signals was determined for the region from 0.6 to 1.4 eV in several samples with different Fermi level position. The quenching of the Si-NL8 signal with the coinciding enhancement of the Si-NL10 signal has been observed with possible indication of some metastable behavior of the NL8 center. For the heavily aluminum doped material strong generation of photocurrent upon band gap illumination has been observed. The results of the study provide further evidence for mutal correlation of both thermal donor related EPR centers since the observed spectral dependences could be understood by relating both NL8 and NL10 spectra to different paramagnetic states of basically the same center.
2
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Paramagnetic State of Hydrogen-Passivated Double-Donor Centers in Silicon

100%
Gregorkiewicz T., Zevenbergen I., Martynov Y., Ammerlaan C.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
735-738
EN
Hydrogenation of two double donor centers in silicon - substitutional sulfur and thermal donor - is studied by electron paramagnetic resonance and electron-nuclear double resonance. For both centers the existence of a new paramagnetic S = 1/2 state identified as the neutral charge state of the double donor passivated with a single hydrogen atom is concluded. The microscopic structure of such complexes is discussed.
3
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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

100%
Gregorkiewicz T., Altink H., Ammerlaan C.
Acta Physica Polonica A
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1991
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vol. 80
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issue 2
161-170
EN
The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.
4
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Free Carriers Heating at Mn^{2+} Magnetic Resonance in CdMnTe

88%
Godlewski M., Gałązka R., Tsimperidis I., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
177-180
EN
The results of optically detected magnetic and cyclotron resonance ex­periments performed on Cd_{1-x}Mn_{x}Te (x = 0.007) are presented. It is shown that the Mn^{2+} magnetic resonance results in heating of free holes, which can be observed via the effects of hot holes on the CdMnTe "edge" emission.
5
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Neutron Transmutation Doped GaP: Optically Detected Magnetic Resonance Studies

88%
Heijmink Liesert B., Godlewski M., Gregorkiewicz T., Ammerlaan C., Goldys E.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
401-404
EN
The first direct proof for successful neutron transmutation doping (NTD) of GaP is presented on the basis of optically detected magnetic resonance (ODMR). GaP:S samples grown by the liquid encapsulated Czochralski method were irradiated with thermal neutrons and subsequently annealed at 800°C. In the ODMR experiments the transmuted Ge substitutional on Ga sites was detected. The NTD process was also found to create deep acceptors, the nature of which will be tentatively discussed.
6
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Mechanism of Optical Detection of Magnetic Resonance in Cd_{1-x}Mn_{x}Te

76%
Godlewski M., Surma M., Gałązka R., Nguyen K., Gisbergen S., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
|
1992
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vol. 82
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issue 4
717-719
EN
The photoluminescence and optically detected magnetic resonance studies of Cd_{1-x}Mn_{x}Te (x = 0.095) are presented. The Mn^{2+} magnetic resonance is detected optically via the changes of "edge" emission induced by the decrease of the Mn spin system magnetization.
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