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Operation modes of the FALCON ion source as a part of the AMS cluster tool

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Girka O., Bizyukov A., Bizyukov I., Gutkin M., Mishin S.
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issue 2
327-330
EN
The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.
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