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1
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Characterisation of Materials by Raman Scattering, ADDENDA

100%
Kozielski M.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 4
925-926
EN
This paper contains an erratum to [M. Kozielski, Acta Phys. Pol. A, 111 343 (2007)].
2
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Characterization of Materials by Raman Scattering

100%
Kozielski M.
Acta Physica Polonica A
|
2007
|
vol. 111
|
issue 3
343-360
EN
The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.
3
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Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

51%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1991
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vol. 79
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issue 2-3
225-228
EN
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
4
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Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

51%
Bala W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 5
723-730
EN
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
5
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Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

51%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
689-692
EN
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
6
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Study of SrLaAlO_{4} and SrLaGaO_{4} Substrate Crystals by Raman Spectroscopy

51%
Drozdowski M., Kozielski M., Pajączkowska A.
Acta Physica Polonica A
|
1997
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vol. 92
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issue 1
139-142
EN
In this paper the study of SrLaAlO_{4} and SrLaGaO_{4} single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
7
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Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

39%
Bala W., Głowacki G., Łukasiak Z., Drozdowski M., Kozielski M., Nossarzewska-Orłowska E., Brzozowski A.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 2
445-448
EN
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
8
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Raman Scattering in Zn_{1-x}Mg_{x}Se Mixed Crystals

33%
Kozielski M., Szybowicz M., Firszt F., Łęgowski S., Męczyńska H., Sekulska B., Szatkowski J., Paszkowicz W.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
1040-1044
EN
This paper presents results of investigations of the Raman scattering of vibrational modes in Zn_{1-x}Mg_{x}Se crystals for the range of composition 0 < x < 0.43. The Raman polarized spectra of Zn_{1-x}Mg_{x}Se were measured at room temperature. The typical Raman spectrum shows four peaks which can be interpreted as longitudinal and transverse optical ZnSe-like and MgSe-like phonons. The ZnSe-like and MgSe-like vibrations can be described by the modified random element isodisplacement model. Results of the Raman measurements in the investigated range of composition confirm the two-mode behaviour of the optical phonons in the mixed Zn_{1-x}Mg_{x} Se crystals.
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