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1
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Raman Spectroscopy of Cubic HgS:Fe

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From the Raman spectra performed at temperatures from 10 K to 295 K for Hg_{1-x}Fe_{x}S crystals containing up to a few percent of iron the phonon energies for selected high-symmetry points of the Brillouin zone have been determined. A very high ionicity of these mixed crystals has been found. The TO phonon frequency value for β-HgS at Γ point, equal to about 177 cm^{-1}, suggested previously in the literature, has been confirmed.
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We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg_{1-x}Co_{x}Se for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.
EN
An experimental and theoretical evidence that the electron-impurity scattering is modified in the presence of the electromagnetic field oscillating with the frequency corresponding to the optical phonon energy is given. The coupled plasmon-phonon mode related feature in the reflectivity spectrum can be used to determine the upper edge of the LO phonon frequency band in highly doped materials.
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Reflectivity Study of Hg_{1-x}Co_{x}Se Crystals

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The reflectivity spectra of Hg_{1-x}Co_{x}Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
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Resonant photoemission spectra of cubic Ηg_{0.94}Fe_{0.06}S were measured for photon energies near to the energy of intra atomic Fe 3p^{6}3d^{6} → 3p^{5}3d^{7} transition. The difference between the spectra taken at resonance and an­tiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
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Reflectivity spectra of HgSe crystals highly doped with Ga and Fe, respectively, were investigated in the spectral region close to the absorption edge at temperatures between 12 K and 295 K. From the analysis of the structure observed in reflectivity the temperature dependence of the Fermi energy was determined for both kinds of crystals.
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Infrared reflectivity was investigated for the mixed Hg_{1-x}Fe_{x}Se crystals for x < 0.1. The theoretical analysis of the experimental curves suggests opening of the energy gap for the composition x = 0.087 at the temperature close to 80 K.
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In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd_{1-x}Mn_{x}Te epilayers (0.66 ≤ x ≤ 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.
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Elastic Constants of β-HgS

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The elastic constants of single crystals of β-HgS highly doped with iron were directly determined at room temperature from the measurements of ultrasonic wave velocities by the pulse-echo technique. The values of c_{11}=6.750, c_{12}=5.186, and c_{44}=2.42 (given at 10^{10} N m^{-2} units) were obtained and compared with the experimental data taken for other mercury chalcogenides. The elastic characteristics of this group of materials is quite similar to those of Cd and Zn chalcogenides.
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Raman Spectroscopy of Co-Doped ZnO Bulk Crystals

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Low-temperature Raman spectra of a bulk mixed crystal Zn_{1-x}Co_xO (x = 0.016) are shown and analyzed. Besides the common modes of the ZnO host lattice, electronic transitions related to the presence of Co^{2+} ions at the Zn sites are observed. In spite of the low Co concentration the presence of collective excitations corresponding to Co and CoO precipitates is also revealed.
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The recent successful growth of single, bulk Pb_{1-x}Cd_{x}Te crystals by self-selecting vapor transport method at the Institute of Physics of the Polish Academy of Sciences in Warsaw opened new opportunities to study the physical properties of this interesting material in detail. In this work we report the preliminary results of X-ray powder diffraction studies performed on a set of Pb_{1-x}Cd_{x}Te solid solutions (where x ≤ 0.056) at high temperatures (295 K ≤ T ≤ 1100 K) and analyzed with the Rietveld refinement. Our results demonstrate the necessity of some correction of the relevant phase diagram and of the solubility limit, known from the literature.
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Electronic Band Structure of Cubic HgS

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Reflectivity spectra of Hg_{1-x}Fe_{x}S (x < 0.04) and HgSe_{1-y}S_{y} (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modi­fication of HgS resulting from the above data is analyzed and discussed.
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Iron Impurity Related Optical Transitions in HgSe:Fe

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Fe^{2+} crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe^{3+} → Fe^{2+}) have been observed and discussed for HgSe doped with iron.
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The thin layers of (Sn,Mn)Te solid solution were grown by molecular beam epitaxy onto (111)-oriented BaF₂ substrates and characterized by scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectrometry, and X-ray diffraction methods. The epitaxial character of the growth was confirmed. All the layers exhibited a regular (fcc) structure of the rock-salt type and were (111)-oriented, their thickness was close to about 1 μm. The layers contained up to 8% of Mn. The microhardness and the Young modulus values were determined by the nanoindentation measurements. The Berkovich type of the intender was applied, the maximum applied load was equal to 1 mN. The results of measurements demonstrated a lack of the composition dependence of the Young modulus value. A slight increase of the microhardness value with an increasing Mn content in the (Sn,Mn)Te solid solution was observed.
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The low-temperature far-infrared reflectivity spectra of HgSe and HgSeS are measured and analysed. The results suggest the one-mode behavior of phonon excitations in HgSeS mixed crystals.
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Optical phonons in mercury chalcogenides doped with selected transition metal ions are investigated by infrared reflectivity and Raman scattering measurements performed at helium temperatures. The results obtained for Hg_{1-x}Fe_{x}Se, Ηg_{1-x}Co_{x}Se, Ηg_{1-x}Fe_{x}S and Hg_{1-x}Co_{x}S mixed crystals demonstrate the significant influence of the 3d electron correlation effects and/or sp-d hybridization on the transition metal ion local mode frequency.
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Lattice Dynamics of Cubic Mercury Sulphide

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The acoustic phonon dispersion of mercury sulphide of zinc-blende structure (β-HgS) was studied by inelastic neutron scattering. The measurements were carried out at 19 K and 295 K on HgS crystals doped with Fe. A slight decrease in phonon frequencies with increasing temperature was found, the temperature dependence being the strongest for LA phonons with [ξ,ξ,0] propagation. From acoustic phonon dispersion the values of selected elastic constants were determined for β-HgS.
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Collective excitations have been analyzed for Cd_{1-x}Mn_{x}Te epilayers (0.66 ≤ x ≤ 1) by the Raman scattering studies performed at temperatures from 7 K to 295 K. Apart from the lattice optical modes magnetic excitations (magnons) were observed at sufficiently low temperatures.
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Impurity-mediated free-carrier absorption was analyzed theoretically taking into account the possible spatial impurity correlations. The effect of correlations was included via the structure factor S(q) obtained from finite temperature Monte Carlo simulations of ordering in the impurity system. From the comparison of the experimental data with the results of calculations it is demonstrated that the ordering of charged centers exists for HgSe:Fe in a wide temperature range.
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AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
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