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Surfaces of Нigh-Tс Superconductors Studied by Means of the Scanning Tunneling Microscope

100%

Witek A., Ornoch L., Dąbkowski A., Raułuszkiewicz J., Institute of Physics P. A. o. S.

Acta Physicae Superficierum

1990

vol. 2

Observations of the natural surface of BiSrCaCu₂Oₓ sintered ceramics applying the scanning tunneling microscope are reported. Measurements were performed in air at room temperature. It can be deduced from the surface images, on which the growth steps are visible with heights corresponding to the dimension of the unit cell along the c-axis or its multiples, that the bulk orthorhombic structure extends to the surface. The surface investigated is rather clean, inert and metallic in nature. It can be identified as the Bi-O layer.

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

64%

Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.

Acta Physica Polonica A

1995

vol. 88

issue 4

775-778

The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.

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1 Acta Physica Polonica A

1 Acta Physicae Superficierum

1 1995

1 1990

2 Ornoch L.

1 Adamczewska J.

1 Bugajski M.

1 Dąbkowski A.

1 Institute of Physics P. A. o. S.

1 Kaniewska M.

1 Kaniewski J.

1 Marczewski J.

1 Mizera E.

1 Muszalski J.

1 Raułuszkiewicz J.

1 Regiński K.

1 Witek A.

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Surfaces of Нigh-Tс Superconductors Studied by Means of the Scanning Tunneling Microscope

Identification of Residual Impurities in Si-Doped MBE Grown GaAs