Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes

100%

Dyba P., Płaczek-Popko E., Zielony E., Gumienny Z., Szatkowski J.

Acta Physica Polonica A

2009

vol. 116

issue 5

944-946

Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy E_2 = 0.33 eV and capture cross-section σ_2 = 3 × 10^{-15} cm^2 has been assigned to the gallium related DX center present in the CdTe material.

Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy

86%

Dyba P., Placzek-Popko E., Zielony E., Gumienny Z., Grzanka S., Czernecki R., Suski T.

Acta Physica Polonica A

2011

vol. 119

issue 5

669-671

p^+-n GaN diodes were studied by means of conventional deep level transient spectroscopy and Laplace transform deep-level spectroscopy methods within the temperature range of 77-350 K. Deep level transient signal spectra revealed the presence of a majority and minority trap of indistinguishable signatures. The Laplace transform deep-level spectroscopy technique due to its superior resolution allows us to unambiguously identify and characterize the traps. The apparent activation energy and capture cross-section for the majority trap were found to be equal to 0.63 eV and 2 × 10^{-16} cm^2 and for the minority trap 0.66 eV and 1.6 × 10^{-15} cm^2. It has been confirmed that the Laplace transform deep-level spectroscopy technique is a powerful tool in characterization of the traps of close signatures.

Deep Levels Induced by CdTe/ZnTe Quantum Dots

73%

Zielony E., Placzek-Popko E., Roznicka A., Gumienny Z., Szatkowski J., Dyba P., Pacuski W., Kruse C., Hommel D., Guziewicz M.

Acta Physica Polonica A

2011

vol. 119

issue 5

630-632

The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.

Refine search results

3 Acta Physica Polonica A

2 2011

1 2009

3 Dyba P.

3 Gumienny Z.

3 Zielony E.

2 Placzek-Popko E.

2 Szatkowski J.

1 Czernecki R.

1 Grzanka S.

1 Guziewicz M.

1 Hommel D.

1 Kruse C.

1 Pacuski W.

1 Płaczek-Popko E.

1 Roznicka A.

1 Suski T.

Search results

Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes

Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy

Deep Levels Induced by CdTe/ZnTe Quantum Dots