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Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection

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Tabe M., Nuryadi R., Moraru D., Burhanudin Z., Yokoi K., Ikeda H.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
811-814
EN
Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.
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