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1
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On the Symmetry of the Sulfur Pair-Related Defect in Silicon

100%
Bennebroek M., Zakrzewski A., Frens A., Schmidt J.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
725-728
EN
A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C_{1h}.
2
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Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

100%
Dussan A., Schmidt J., Koropecki R.
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vol. 125
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issue 2
174-176
EN
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane (SiH_4) diluted in hydrogen, and diborane (B_2H_6) as a dopant gas. The concentration of B_2H_6 in SiH_4 was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the μ_{n}τ_{n} product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
3
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Analysis of forging process of the NiCrN superalloy for motor boat driving shaft

100%
Świątoniowski A., Sińczak J., Łukaszek-Sołek A., Schmidt J.
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issue 3
4
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Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

64%
Subačius L., Venckevičius R., Kašalynas I., Seliuta D., Valušis G., Schmidt J., Lisauskas A., Roskos H., Alekseev K., Köhler K.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
167-169
EN
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
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