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1
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Characterization of UHWPE-TiO₂ Composites Produced by Gelation/Crystallization Method

100%
Celebi Efe G., Bindal C., Ucisik A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 3
767-769
EN
In this study, ultra-high molecular weight polyethylene (UHMWPE) - TiO₂ composites reinforced with TiO₂ particles with weight ratios of 0.5, 1 and 2% were produced by gelation/crystallization method in decalin+antioxidant solution of UHMWPE at 150°C, for 40 min by using magnetic stirrer. The gel mixture was cooled in an aluminum tray embedded in iced water under ambient conditions and dried in an oven at 130°C for 90 min to remove any residual trace of decalin. Distribution and elemental analyses of TiO₂ particles in polymer matrix was examined by SEM-EDS. Crystallization behavior was investigated by differential scanning calorimetry (DSC). Based on the results, TiO₂ particles in the UHMWPE have accelerated the crystallization, acting as nucleating agents, with increment from 56% for UHMWPE to 63.5% for UHMWPE-2 wt% TiO₂. The present bond types in composites were analyzed by Raman spectroscopy and the results are in good agreement with literature. Uniaxial tensile tests were performed to determine Young's modulus of UHMWPE-TiO₂ composites. It was found that Young's modulus of UHMWPE was increased from 52 MPa to 800 MPa with the addition of TiO₂ particles.
2
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Pack Siliconizing of Ti6Al4V Alloy

100%
Celebi Efe G., İpek M., Bindal C., Zeytin S.
Acta Physica Polonica A
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2017
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vol. 132
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issue 3
760-762
EN
In this study, it was aimed to produce titanium silicide layer on Ti6Al4V by a simple, cheap and efficient method of pack siliconizing. Siliconizing was performed in a pack containing a mixture composed of SiO₂ powder as siliconizing source, pure Al powder as a reducer for siliconizing, NH₄Cl as an activator and Al₂O₃ powder as filler, at 1000°C for 8, 10 and 12 hours in open atmospheric furnace. Optical microscope and SEM-EDS studies indicate that the morphology of silicide layers has smooth, dense and layered nature. The presence of phases, confirmed by XRD analyses, reveals that the silicide layers formed at 1000°C are composed of TiSi₂, Ti₃Si₅, TiN, TiO₂ and SiO₂ compounds. Silicide layer thickness was increased with increasing process time and ranged from 7.5 to 9.0 μm. Hardness of silicide layers, measured by Vickers indentation, is over 2100 HV.
3
Content available remote

Effects of SiC Particle Size on Properties of Cu-SiC Metal Matrix Composites

88%
Celebi Efe G., Altinsoy I., Ipek M., Zeytin S., Bindal C.
Acta Physica Polonica A
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2012
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vol. 121
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issue 1
251-253
EN
This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700°C. Scanning electron microscopy studies showed that SiC particles were dispersed in copper matrix homogeneously. The presence of Cu and SiC components in composites were verified by X-ray diffraction analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0% to 95.0% for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 30 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (international annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.
4
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Comparing of Commercial and Cemented Cu-SiC Composites

76%
Celebi Efe G., Altinsoy I., Yener T., Ipek M., Zeytin S., Bindal C.
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vol. 125
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issue 2
417-419
EN
SiC with 30 μm particle size reinforced copper composites have been fabricated by powder metallurgy method and sintered at 700C for 2 h in open atmosphere. Copper powder was produced by cementation method and obtained as commercial for comparing. Cemented and commercial copper powders were reinforced with SiC having 30 μm particle size at ratios of 0, 1, 2, 3, and 5 wt% for improving mechanical properties of copper without decreasing the electrical conductivity. The presence of Cu and SiC which are dominant components in the sintered composites were confirmed by X-ray diffraction analyses technique. Scanning electron microscope showed that SiC particles are distributed homogeneously in the copper matrix. The relative densities of Cu and Cu-SiC composites sintered at 700C are ranged from 98.0% to 96.2% for commercial Cu-SiC composites, 97.55 to 95.0% for cemented Cu-SiC composites, microhardness of composites ranged from 133 to 277 HV for commercial Cu-SiC composites and 127 to 229 HV for cemented Cu-SiC composites, and the electrical conductivity of composites changed between 95.6%IACS and 77.2%IACS for commercial Cu-SiC composites, 91.7%IACS and 69%IACS for cemented Cu-SiC composites. It was observed that there is a good agreement between cemented Cu-SiC and commercial Cu-SiC composites.
5
Content available remote

An Evaluation of Cu-B₄C Composites Manufactured by Powder Metallurgy

76%
Yener T., Altinsoy I., Yener S., Celebi Efe G., Ozbek I., Bindal C.
Acta Physica Polonica A
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2015
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vol. 127
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issue 4
1045-1047
EN
In this study, the influences of B₄C ratios on some mechanical and physical properties such as relative density, microhardness and electrical properties of cold pressed Cu-B₄C composites were investigated. Curve fitting is applied for the estimation of electrical conductivity. Commercial copper powders with 40 μm particle size were reinforced with B₄C, with particle size of 40 μm, at ratios of 1, 2, 3 wt.%, for improving mechanical properties of copper used as electrical conductor. Cu-B₄C composites have been fabricated by powder sintering process at a temperature of 900°C for 2 h. The presence of Cu and B₄C, which are dominant components in the sintered composites, were confirmed by X-ray diffraction analysis technique and SEM-EDS. Scanning electron microscope (SEM-EDS) has shown that B₄C particles are distributed homogenously in the copper matrix. The relative densities of Cu and Cu-B₄C composites, sintered at 900°C, ranged from 95.7 to 91.6%. Microhardness of composites ranged from 84.5 to 94.6 HB. It was observed that cold pressed Cu-1 wt.% B₄C composites revealed promising physical properties. Results of electrical conductivity measurement of Cu-B₄C composite material are compared to the results of the model and the overall accuracy level above 96% is obtained.
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