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Electric Field Stimulated Emission of Electrons from Deep Traps in SiO_{2}

100%
Strzałkowski I., Marczewski M., Kowalski M., Jastrzębski C.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
701-704
EN
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO_{2} layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO_{2}.
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Fuel fractions obtained in the recycling of plastics

100%
Sokołowski J., Rokicki G., Marczewski M., Krajewska J.
Polish Journal of Chemical Technology
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2007
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vol. 9
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issue 3
46-50
EN
The decomposition of mixtures of polystyrene, polyethylene, and motor oil was studied at 470 - 510°C in a flow-through setup supplied with a fluidized bed reactor and a cascade of receivers. The aim of the work was to determine the role of the fluidized bed in the reactor, in the process of degradation of plastics in the cases where it was only a carrier of heat for the endothermal process of pyrolysis or it was both a carrier of heat and a catalytic bed for the process. The effect of the catalyst granulation and of the method of the organization of work in the reactor on the yield of the process and on the composition of the products obtained, was also studied.In the cases where Al2 O3 of granulation 0.2 mm was used as a fluidized bed catalyst the liquid products of the decomposition of the polymers contained mainly alkyl-aromatic derivatives of styrene, benzene and alkane hydrocarbons. If nano-Al2 O3 was used as a catalyst and it was introduced into the reactor with a stream of raw materials, the obtained products were solids, composed mostly of styrene and alkene hydrocarbons.
3
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On Trap Generation in SiO_{2} Films of Si MOSFETS by Hot Electrons

88%
Strzałkowski I., Marczewski M., Kowalski M., Jastrzębski C., Bąkowski A.
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EN
Trap generation in amorphous SiO_{2} films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10^{19} e/cm^{-2} and injected current density in the range 2-300 μA/cm^{2} were determined and discussed.
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