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EN
The work presents the optical properties of porous silica thin films prepared by TEOS sol-gel method. The films were deposited onto glass substrate using dip-coating technique. The spectroscopic ellipsometry measurements have been performed to determine the optical constants of the films. This technique also enabled evaluation of the depolarization for the investigated layers. Additionally, the spectrophotometric measurements of transmittance and reflectance by the use of integrating sphere and reflectance probe have been made with the aim of possible application of the films as antireflective coatings.
EN
The work presents an application of two scanning optical techniques, i.e. optical profilometry and angle resolved scattering method. The first method measures the light reflected from a film during scan of the surface, while the second method measures light intensity as a function of the scattering angle. The angle resolved scattering and optical profilometry measurements, being complementary to the atomic force microscopy, give information about surface topography. Scattered radiation measured by angle resolved scattering and optical profilometry is a function of height and slope of microfacets. The analysis of images allows to determine the most important statistic surface parameters, like roughness, height distribution and autocorrelation length, in large wavelength range by the determination of power spectral density function. The fast Fourier transform of angle resolved scattering and optical profilometry images permits to determine the distribution of surface features in the inverse space, such as periodicity and anisotropy. In this paper the results obtained for porous SiO₂, SiO₂-TiO₂ blends, TiN and polymer thin films have been presented. The paper demonstrates the usefulness of the angle resolved scattering and optical profilometry for the surface and volume thin film inspection.
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Thermo-Optical Parameters of Amorphous a-C:N:H Layers

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EN
Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.
EN
The goal of this work was to investigate the influence of rare-earth ions such as Nd^{3+} and Er^{3+} on the optical properties of tellurite glass of the TeO_2-WO_3-PbO-La_2O_3 system. The optical studies of the glasses comprised spectrophotometry (reflectance and transmittance) and spectroscopic ellipsometry. The spectrophotometric measurements yield a number of narrow absorption bands which correspond to characteristic transitions between the ground- and consecutive excited states of rare-earth ions. From ellipsometric studies, in turn, the dispersion of the refraction coefficient has been obtained which appears to be practically the same for the tellurite glass matrix and the matrix doped with Nd^{3+} and Er^{3+} ions.
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