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Band Structure and Optical Properties οf the Layered Hg_{3}TeCl_{4} Crystal

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Sznajder M., Bercha D., Potera P., Khachapuridze A., Panko V., Bercha S.

Acta Physica Polonica A

2009

vol. 116

issue 5

950-951

First experimental investigations on absorption and photoluminescence of the novel Hg_{3}TeCl_{4} monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the Hg_{3}TeCl_{4} crystal confirmed that Hg_{3}TeCl_{4} is a wide-band-gap photoconductor (E_{g}= 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.

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1 Acta Physica Polonica A

1 2009

1 Bercha D.

1 Bercha S.

1 Khachapuridze A.

1 Panko V.

1 Potera P.

1 Sznajder M.

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Band Structure and Optical Properties οf the Layered Hg_{3}TeCl_{4} Crystal