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EN
The work presents an application of two scanning optical techniques, i.e. optical profilometry and angle resolved scattering method. The first method measures the light reflected from a film during scan of the surface, while the second method measures light intensity as a function of the scattering angle. The angle resolved scattering and optical profilometry measurements, being complementary to the atomic force microscopy, give information about surface topography. Scattered radiation measured by angle resolved scattering and optical profilometry is a function of height and slope of microfacets. The analysis of images allows to determine the most important statistic surface parameters, like roughness, height distribution and autocorrelation length, in large wavelength range by the determination of power spectral density function. The fast Fourier transform of angle resolved scattering and optical profilometry images permits to determine the distribution of surface features in the inverse space, such as periodicity and anisotropy. In this paper the results obtained for porous SiO₂, SiO₂-TiO₂ blends, TiN and polymer thin films have been presented. The paper demonstrates the usefulness of the angle resolved scattering and optical profilometry for the surface and volume thin film inspection.
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EN
The Ni/Al multilayer coating of λ ≈100 nm was deposited onto (001)-oriented monocrystalline silicon substrate using double target magnetron sputtering system equipped with rotating sample holder. The thicknesses of alternating layers were adjusted in the way to preserve the chemical composition ratio close to 50%Al:50%Ni (at.%). The in situ X-ray diffraction and in situ transmission electron microscopy heating experiments were carried out at relatively low heating rates (20°C/min) in order to study the phase transformation sequence. The investigations revealed that the reaction between Ni and Al multilayers starts at ≈200°C with precipitation of Al₃Ni phase, while above 300°C dominates precipitation of Ni₃Al and NiAl intermetallic phases. Both the X-ray and electron diffractions acquired at 450°C confirmed presence of the Ni₃Al and NiAl intermetallics, but the former pointed at still lasting traces of Ni(Al) solid solution.
EN
Direct laser interference lithography is a new and low cost technique which can generate the line- or dot-like periodic patterns over large areas. In the present work, we report on direct fabrication of micrometer structures on Si surface. In the experiments the pulsed high power Nd:YAG laser operating at 1064 nm wavelength was used. Two-beam configuration with an angle of incidence of 40° was employed and different laser fluences up to 2.11 J/cm^2 were tested. Areas about 1 cm in diameter have been processed with a single pulse of 10 ns. The laser treated samples were analyzed by atomic force microscopy to investigate the surface topography and to measure the size and depth of the achieved structures. We observed periodic line-like arrays with grating period of the order of 1 μm.
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