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Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

100%

Klinger D., Kret S., Auleytner J., Żymierska D.

Acta Physica Polonica A

2002

vol. 102

issue 2

259-264

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

76%

Klinger D., Lefeld-Sosnowska M., Pełka J., Paszkowicz W., Gierłowski P., Pankowski P.

Acta Physica Polonica A

2002

vol. 101

issue 5

795-801

This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si^{2+} ions of energy 140 keV and doses from 1×10^{15} to 1× 10^{16} ions/cm^2. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.

Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

64%

Datsenko L., Żymierska D., Auleytner J., Klinger D., Machulin V., Klad'ko V., Melnik V., Prokopenko I., Czosnyka T., Choiński J.

vol. 96

issue 1

137-142

The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.

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3 Acta Physica Polonica A

2 2002

1 1999

3 Klinger D.

2 Auleytner J.

2 Żymierska D.

1 Choiński J.

1 Czosnyka T.

1 Datsenko L.

1 Gierłowski P.

1 Klad'ko V.

1 Kret S.

1 Lefeld-Sosnowska M.

1 Machulin V.

1 Melnik V.

1 Pankowski P.

1 Paszkowicz W.

1 Pełka J.

1 Prokopenko I.

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Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions