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Deposition of Zn-containing films using atmospheric pressure plasma jet

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Galmiz O., Stupavska M., Wulff H., Kersten H., Brablec A., Cernak M.
Open Chemistry
|
2015
|
vol. 13
|
issue 1
EN
The purpose of this work was to deposit Zn-containing films on Si substrates using the commercial atmospheric pressure plasma jet “kINPen’09.” In preliminary experiments Zn-containing films were deposited on the silicon substrates immersed in water solutions of Zn(NO3)2•6H2O salt. The surface composition of deposited films was analyzed by the XPS (X-ray photoelectron spectroscopy) technique while the bulk composition was studied by means of XRD (X-ray diffraction) mesurements. The film thickness was measured by a profilometer. We have determined that the concentration of the zinc nitrate solution as well as changes in the deposition time resulted in a large fluctuation of the deposited film thickness. However, the successful deposition of the Zn-containing films on the Si substrate was definitely confirmed.
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