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1
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Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

100%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
225-228
EN
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
2
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Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures

100%
Bała P., Ryszewski R., Bała W.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 2
341-344
EN
The tunneling probability in double barrier heterostructures can be af­fected by various effects. One of the most significant is presence of the ac­cumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
3
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Time Dependent Tunneling in Double-Barrier ZnSe/ZnTe Structures

100%
Bała P., Kwiatkowski J., Bała W.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
649-652
EN
The wave-packet time dependent quantum mechanics is used to calculate tunneling probability through a double-barrier ZnSe/ZnTe structure. The time dependent I-V characteristics are obtained for several structures. The resonant peaks are observed and their changes with the barrier parameters are monitored.
4
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Exciton Electroluminescence of ZnSe/ZnO Structures under Biaxial Stress

100%
Bała W., Firszt F., Łęgowski S., Męczyńska H.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
896-899
EN
The strained ZnSe/ZnO structures grown on (111) ZnSe crystals by plasma oxidation was investigated by electro- and photoluminescence methods. The lines of heavy and light hole excitons under biaxial compressive stress are measured as a function of the temperature.
5
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Dependence of Exciton Linewidth on the Composition of Zn_{x}Mg_{1-x}Se Layers Grown by MBE

100%
Bała W., Głowacki G., Gapiński A.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
667-670
EN
This work deals with the study of the photoluminescence and reflectiv­ity properties of Zn_{x}Mg_{1-x}Se epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn_{x}Mg_{1-x}Se layers grown on GaAs and ZnTe substrates are dominated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep in­crease in the linewidth with an increase in Mg concentration are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn_{0.78}Μg_{0.22}Se.
6
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Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

100%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
689-692
EN
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
7
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Tunneling in Double-Barrier Heterostructures - Comparison of Time-Dependent and Stationary Approach

100%
Bała P., Ryszewski R., Bała W.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 4
685-688
EN
The tunneling probability through a double-barrier ZnSe/ZnTe structure is calculated using both wave-packet time dependent quantum mechanics and stationary planar-wave approximation. The obtained I-V characteristics are compared and very good consistence in resonant peaks width and position is observed. The absolute value of tunneling probability obtained in time-dependent and stationary approach is also similar.
8
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Deep Level Studies in Zn_{1-x}Mg_{x}Se Layers Grown by MBE

88%
Płachetko S., Ząbik G., Łukasiak Z., Borowski P., Bała W.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
483-486
EN
The deep levels present in semiconducting Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: E_{T1}=0.28 eV and E_{T2}=0.56 eV. For the Zn_{1-x}Mg_{x}Se epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.
9
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Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals

88%
Sahraoui B., Chevalier R., Nguyen Phu X., Rivoire G., Bała W.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
1070-1074
EN
The dependence of nonlinear absorption at 532 nm of n-type ZnSe crystals upon annealing temperature and free carrier concentration is reported. The nonlinear optical absorption as well as the efficiency of degenerate four wave mixing of ZnSe are investigated. It is found that the magnitude of the nonlinear absorption decreases with an increase in the electron concentration. The nonlinear refractive index change is estimated.
10
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Transient Photo-Induced Current Measurements in High Resistivity ZnSe Crystals

88%
Bała W., Firszt F., Dul D., Turlo Z., Borkowski J.
Acta Physica Polonica A
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1991
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vol. 79
|
issue 2-3
295-298
EN
Using technique of computerized signal-averaging of photocurrent transient, we have studied the details of deep level states in high resistivity ZnSe crystals. The time resolved spectra of photocurrent and four-gate PICT spectra are presented.
11
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Luminescence of Zn_{x}Mg_{1-x}Se Layers Obtained by Thermal Diffusion of Mg into ZnSe and Zn_{x}Mg_{1-x}Se Epilayers Grown by Molecular Beam Epitaxy

88%
Bała W., Firszt F., Głowacki G., Gapiński A., Dzik J.
|
EN
This work deals with the study of photoluminescence properties of Zn_{x}Mg_{1-x}Se epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and Zn_{x}Mg_{1-x}Se layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of Zn_{x}Mg_{1-x}Se layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
12
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Optical Properties of Zn_{1-x}Mg_{x}Se Epilayers Studied by Spectroscopy Methods

88%
Głowacki G., Gapiński A., Derkowska B., Bała W., Sahraoui B.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 2
321-325
EN
Linear optical properties of the Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) alloys have been studied using reflectance, spectroscopic ellipsometry and photoluminescence measurements. The refractive indices of Zn_{1-x}Mg_{x}Se epilayers were investigated as a function of Mg composition (0 ≤ x ≤ 0.4). The energies of band gap E_{g} and spin-orbit splitting E_{g}+Δ, have been determined. These energies are shifted gradually to higher values with increasing Mg content.
13
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Raman Analysis of Zn_{1-x}Mg_{x}Se Layers Grown on GaAs and ZnTe Substrates

76%
Renucci M., Frandon J., Głowacki G., Gapiński A., Rozpłoch F., Bała W.
Acta Physica Polonica A
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1996
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vol. 90
|
issue 5
1065-1069
EN
A study of the Raman scattering in Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) epilayers grown by molecular beam epitaxy on (100) GaAs and (111)_{Zn} ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LO_{Zn-Se} and LO_{Mg-Se}) were observed under excitation of the Ar^{+} and Kr^{+} laser lines at room temperature, whose frequencies and intensities depend characteristically on the Mg content.
14
Content available remote

Visible Luminescence from Porous Silicon

76%
Bała W., Firszt F., Nossarzewska-Orłowska E., Brzozowski A., Orłowski B., Kowalski B., Guziewicz E.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
761-764
EN
This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
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