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Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering

100%

Ievtushenko A., Karpyna V., Lashkarev G., Lazorenko V., Baturin V., Karpenko A., Lunika M., Dan'ko A.

Acta Physica Polonica A

2008

vol. 114

issue 5

1131-1137

Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.

Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

81%

Romanyuk V., Dmitruk N., Karpyna V., Lashkarev G., Popovych V., Dranchuk M., Pietruszka R., Godlewski M., Dovbeshko G., Timofeeva I., Kondratenko O., Taborska, M., Ievtushenko A.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-36-A-40

Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

81%

Ievtushenko A., Lashkarev G., Lazorenko V., Karpyna V., Sichkovskyi V., Kosyachenko L., Sklyarchuk V., Sklyarchuk O., Bosy V., Korzhinski F., Ulyashin A., Khranovskyy V., Yakimova R.

Acta Physica Polonica A

2008

vol. 114

issue 5

1123-1129

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

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3 Acta Physica Polonica A

1 2016

2 2008

3 Ievtushenko A.

3 Karpyna V.

3 Lashkarev G.

2 Lazorenko V.

1 Baturin V.

1 Bosy V.

1 Dan'ko A.

1 Dmitruk N.

1 Dovbeshko G.

1 Dranchuk M.

1 Godlewski M.

1 Karpenko A.

1 Khranovskyy V.

1 Kondratenko O.

1 Korzhinski F.

1 Kosyachenko L.

1 Lunika M.

1 Pietruszka R.

1 Popovych V.

1 Romanyuk V.

1 Sichkovskyi V.

1 Sklyarchuk O.

1 Sklyarchuk V.

1 Taborska, M.

1 Timofeeva I.

1 Ulyashin A.

1 Yakimova R.

Search results

Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering

Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures