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Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

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Syperek M., Ryczko K., Dallner M., Dyksik M., Motyka M., Kamp M., Höfling S., Misiewicz J., Sęk G.

Acta Physica Polonica A

2016

vol. 130

issue 5

1224-1228

Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.

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1 Acta Physica Polonica A

1 2016

1 Dallner M.

1 Dyksik M.

1 Höfling S.

1 Kamp M.

1 Misiewicz J.

1 Motyka M.

1 Ryczko K.

1 Syperek M.

1 Sęk G.

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Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range