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1
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Visual Perception in Nuclear Medicine and Volumetric Data

100%
Pietrzyk M.
Acta Physica Polonica A
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2015
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vol. 127
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issue 5
1523-1526
EN
Any diagnostic decision that involves imaging techniques depends not entirely on the images themselves but also on the perception and interpretation by a radiologist. In fact, such human factors appear to be a bottleneck to imaging accuracy. A better understanding of visual perception and decision-making processes seem to be necessary for the advancement and optimization of medical imaging. Therefore, research on the accuracy of medical imaging draws on techniques from a wide range of disciplines in an attempt to minimize diagnostic errors and improve the healthcare system. This short review of the psychophysical studies in the radiological domain focuses on the recent work conducted in the visual perception of nuclear medicine images and volumetric data.
2
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Model of Phase Transformation for Niobium Microalloyed Steels

64%
Niżnik B., Pietrzyk M.
Archives of Metallurgy and Materials
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2011
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issue 3
3
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Robust Multiscale Modelling Of Two-Phase Steels On Heterogeneous Hardware Infrastructures By Using Statistically Similar Representative Volume Element

51%
Rauch Ł., Pietrzyk M., Bzowski K., Bachniak D.
Archives of Metallurgy and Materials
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2015
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issue 3
4
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Analysis of the Stress Concentration in the Nanomultilayer Coatings Based on Digital Representation of the Structure

51%
Major Ł., Perzyński K., Madej Ł., Pietrzyk M.
Archives of Metallurgy and Materials
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2011
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issue 2
5
Content available remote

Resonant Photoemission Study οf 4f Electrons on the Surface οf Semiconductors

51%
Orłowski B., Kowalski B., Pietrzyk M., Buczko R.
Acta Physica Polonica A
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2008
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vol. 114
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issue S
S-103-S-114
EN
The contribution of 4f electrons to the electronic structure of the semiconductor clean surface caused by the surface doping of it by rare-earth metal atoms (Eu, Sm) will be presented. The surface doping was performed by the controlled, sequential deposition of the rare-earth metal atoms on the clean surface in UHV conditions (Sm on GaN or CdTe) or by the doping of the layer volume of (EuGd)Te. After each deposition or surface treatment the synchrotron radiation was used to measure in situ the resonant photoemission spectra (the Fano type resonance) to study the contribution of 4f electrons of divalent and trivalent Sm and Eu ions to the valence band electronic structure of created sample. The first stages of the metal atoms deposition lead to the surface doping. Further metal atoms deposition leads to the growth of the metallic islands on the surface and causes the appearance of the sharp metallic Fermi edge in the energy distribution curves. Proper coverage and annealing of the sample surface with metal atoms leads to the diffusion of the metal atoms into the sample and results in an increase in the crystal doping and decrease in the metallic islands contribution to the measured spectra. As a result, the new electronic structure of the valence band can be created and investigated in situ.
6
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Computer System for Identification of Material Models on the Basis of Plastometric Tests

51%
Rauch L., Pietrzyk M., Sztangret L.
Archives of Metallurgy and Materials
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2013
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issue 3
7
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Evaluation of Adhesive Wear Mechanism for Application in Hybrid Tool Wear Model in Hot Forging Process

46%
Wilkus M., Rauch Ł., Szeliga D., Pietrzyk M., Wilkus M., Rauch Ł., Szeliga D., Pietrzyk M.
Archives of Metallurgy and Materials
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2019
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vol. 64
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issue 4
8
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Accounting for the Inhomogeneity of Deformation in Identification of Microstructure Evolution Model / Niejednorodność Odkształcenia W I Dentyfikacji Modelu Rozwoju Mikrostruktury

45%
Szeliga D., Smyk G., Pietrzyk M., Kuziak R., Kopp R.
Archives of Metallurgy and Materials
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2015
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issue 4
9
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Application of Numerical and Physical Simulation to Design of the Best Manufacturing Technology for Fasteners

45%
Kusiak J., Szeliga D., Pietrzyk M., Skóra M., Rauch Ł.
Archives of Metallurgy and Materials
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2015
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issue 1
10
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Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy

39%
Kowalski B., Orlowski B., Pietrzyk M., Kaczor P., Kopalko K., Mickievicius S., Johnson R.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
735-740
EN
The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp^3 bands of the semiconductor are discussed.
11
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Model Of Relaxation Of Residual Stresses In Hot-Rolled Strips

39%
Milenin A., Kustra P., Pietrzyk M., Kuziak R., Pidvysots'kyy V., Witek S.
Archives of Metallurgy and Materials
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2015
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issue 3
12
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Kinetics of eukaryote cells adhesion under shear flow detachment on the PLD deposited surfaces

39%
Major R., Bruckert F., Lackner J. M., Waldhauser W., Pietrzyk M., Major B.
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2008
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vol. 56
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issue 3
13
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Fano Resonance of Eu^{2+} and Eu^{3+} in (Eu,Gd)Te MBE Layers

33%
Orlowski B., Kowalski B., Dziawa P., Pietrzyk M., Mickievicius S., Osinniy V., Taliashvili B., Kowalik I., Story T., Johnson R.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
803-807
EN
Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu^{2+} and Eu^{3+} ions to the valence band. The resonant and antiresonant photon energies of Eu^{2+} ions were found as equal to 141 V and 132 eV, respectively and for Eu^{3+} ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu^{2+}4f electrons was found at the valence band edge while for Eu^{3+} it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
14
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Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe

33%
Pietrzyk M., Kowalski B., Orłowski B., Knoff W., Osinniy V., Kowalik I., Story T., Johnson R.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
275-281
EN
We present the results of the electronic band structure study of Ge_{0.9}Mn_{0.1}Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
15
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Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions

33%
Orlowski B., Osinniy V., Dziawa P., Pietrzyk M., Kowalski B., Taliashvili B., Story T., Johnson R.
Acta Physica Polonica A
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2008
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vol. 114
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issue 2
351-356
EN
The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of Gd^{3+} 4f and 5p shells, resonance and antiresonance energies for Gd^{3+} were determined. The presence of Eu^{3+} ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the Eu^{3+}4f and Gd^{3+}4f electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either Eu^{3+} or Gd^{3+} are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
16
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A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

33%
Pietrzyk M., Kowalski B., Orlowski B., Knoff W., Story T., Dobrowolski W., Slynko V., Slynko E., Johnson R.
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issue 2
293-295
EN
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
17
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Valence States of Metal Ions in La_{0.7}Ce_{0.3}MnO_3 Thin Films

27%
Mickevičius S., Bondarenka V., Grebinskij S., Oginskis A., Butkutė R., Tvardauskas H., Vengalis B., Orlowski B., Osinniy V., Pietrzyk M., Drube W.
|
EN
We report valence states of ions in La_{0.7}Ce_{0.3}MnO_3 thin films grown by a reactive dc magnetron sputtering. The measurements were performed by means of high-energy X-ray photoelectron spectroscopy using synchrotron radiation. It was found that Ce ion in the compound is either in tetravalent or trivalent chemical state, manganese is in divalent, trivalent and tetravalent states, while La ion existing in oxide and hydroxide chemical species is in trivalent state.
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