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Formation of Porous n-A_3B_5 Compounds

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Šimkiene I., Kindurys A., Treideris M., Sabataityte J.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
1085-1090
EN
Porous layers of A_3B_5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm^2) porous layers of uniform porosity were produced by anodization process of n-type A_3B_5 semiconductors,
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