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Synthesis and Characterization of Black CoFe2O4 Pigments Using MOOH (M = Fe and Co) Nanorod

100%
Yu R., Yun J., Kim Y.
Archives of Metallurgy and Materials
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2017
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vol. 62
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issue 2
2
Content available remote

Structural and Optical Properties of Hydrothermally Synthesized ZnO and Zn_{0.99}O:Eu³⁺ Powders

88%
Park K., Hakeem D., Kim J., Kim Y., Kim S.
Acta Physica Polonica A
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2018
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vol. 133
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issue 4
902-906
EN
The structural and optical properties of the ZnO and Zn_{0.99}O:Eu³⁺ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and Zn_{0.99}O:0.01Eu³⁺ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and Zn_{0.99}O:0.01Eu³⁺ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of Eu³⁺. The photoluminescence properties of annealed Zn_{0.99}O:0.01Eu³⁺ powders were substantially improved by controlling the synthesis temperature. The annealed Zn_{0.99}O:0.01Eu³⁺ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
3
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Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure

76%
Lee S., Kim J., Yoon S., Kim Y., Lee S., Honsberg C.
Acta Physica Polonica A
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2016
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vol. 130
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issue 5
1213-1216
EN
The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (E_{g}) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
4
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Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer

52%
Kim M., Jin S., Choi H., Kim G., Yim K., Kim S., Nam G., Yoon H., Kim Y., Lee D., Kim J., Kim J., Leem J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 6
875-879
EN
A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 10^{19} cm^{-3} was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
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