Search results

Sort By:

Limit search:

Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

100%

Auleytner J., Skorokhod M., Datsenko L., Khrupa V.

Acta Physica Polonica A

1996

vol. 90

issue 3

541-546

Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.

X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions

88%

Auleytner J., Khrupa V., Datsenko L., Krasulya S., Skorokhod M.

Acta Physica Polonica A

1996

vol. 89

issue 3

301-307

Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.

Refine search results

2 Acta Physica Polonica A

2 1996

2 Auleytner J.

2 Datsenko L.

2 Khrupa V.

2 Skorokhod M.

1 Krasulya S.

Search results

Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions