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Transport Properties of Disordered Graphene Layers

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Gryglas-Borysiewicz M., Jouault B., Tworzydło J., Lewińska S., Strupiński W., Baranowski J.

Acta Physica Polonica A

2009

vol. 116

issue 5

838-840

Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity ρ_{xy} is nonlinear as a function of B, which can be described using a many-carrier model.

Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

100%

Baj M., Gryglas M., Jouault B., Maude D., Faini G., Gennser U., Cavanna A.

Acta Physica Polonica A

2006

vol. 110

issue 2

157-162

Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X_{xy} and X_z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X_{xy} states can be seen without any phonon participation.

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

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Lewińska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A.

Acta Physica Polonica A

2011

vol. 119

issue 5

606-608

Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

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3 Acta Physica Polonica A

1 2011

1 2009

1 2006

3 Jouault B.

2 Baj M.

2 Gennser U.

2 Gryglas-Borysiewicz M.

2 Lewińska S.

1 Baranowski J.

1 Cavanna A.

1 Faini G.

1 Gryglas M.

1 Maude D.

1 Ouerghi A.

1 Przybytek J.

1 Strupiński W.

1 Tworzydło J.

Search results

Transport Properties of Disordered Graphene Layers

Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions