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Investigation of the influence of low-concentration hydrogen on the surface potential of thin metallic films for sensor applications

100%
Prażmowska J., Szyszka A., Paszkiewicz R., Tłaczała M.
Open Physics
|
2011
|
vol. 9
|
issue 2
398-403
EN
In this paper, a study of the influence of hydrogen (concentrations 6 ppm − 1%) on the work function of thin metallic films at moderately elevated temperatures is presented. The work function was measured indirectly by the observation of the surface potential of dedicated test structures using scanning surface potential microscope. Metallic layers with thicknesses of 10, 20, 30, and 50 nm were deposited on semiconductor substrates as well as on a thick gold layer. The investigations were focused on palladium thin films although a comparison to results obtained for platinum layers was also discussed.
2
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Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

88%
Prazmowska J., Piasecki T., Szyszka A., Paszkiewicz R., Tłaczała M.
Open Physics
|
2011
|
vol. 9
|
issue 2
392-397
EN
In the paper results of investigation of the influence of low concentration hydrogen on stress changes in thin catalytic metal films were discussed. The concentration of H2 was altered from 6 ppm to 1% of hydrogen (6N) in nitrogen (6N). Silicon beams covered with palladium or platinum films of various thicknesses were anchored at one end and their deflection at the other end was measured by atomic force microscope. Stress changes were determined by application of modified Stoney formula and compared with results of computer modelling. The influence of stress caused by hydrogen absorption on the alteration of output characteristics of AIII-N based hydrogen sensors was excluded. The time dependence of stress in metallic films for various hydrogen concentrations indicated dissociation limited mechanism of hydrogen absorption.
3
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Creation of high resolution pattern by nanoscratching

64%
Ramiączek-Krasowska M., Prażmowska J., Los K., Stafiniak A., Szyszka A., Paszkiewicz R., Orski W., Tarnowski K., Tłaczała M.
Open Physics
|
2011
|
vol. 9
|
issue 2
404-409
EN
The lithography is a basic microelectronic process which determines properties of fabricated device. The resolution of optical lithography applied nowadays is insufficient for creating high resolution patterns such as gate electrode in transistors. The scaling ability is the major motivation for undertaking experiments to elaborate high resolution lithography techniques. The atomic force microscope (AFM) is commonly used as tool for creation patterns in sub-micrometers resolution. In this paper, the results of simulations of electromagnetic field behavior during passing the gap with a size smaller than the wavelength of the optical lithography light source are presented. Also results of the nanoscratching lithography prepared for various parameters of force that are applied to the tip are summarized.
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