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Ultrafast Phenomena in Freestanding LT-GaAs Devices

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Marso M., Mikulics M., Adam R., Wu S., Zheng X., Camara I., Siebe F., Förster A., Güsten R., Kordoš P., Sobolewski R.

Acta Physica Polonica A

2005

vol. 107

issue 1

109-117

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10^{-7} A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO_2 host substrate compared to the native substrate.

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1 Acta Physica Polonica A

1 2005

1 Adam R.

1 Camara I.

1 Förster A.

1 Güsten R.

1 Kordoš P.

1 Marso M.

1 Mikulics M.

1 Siebe F.

1 Sobolewski R.

1 Wu S.

1 Zheng X.

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Ultrafast Phenomena in Freestanding LT-GaAs Devices